首页> 外国专利> Db - linear, process independent variable gain amplifier

Db - linear, process independent variable gain amplifier

机译:DB-线性,独立于过程的可变增益放大器

摘要

Gate voltage control circuit with:a first mosfet (114), a gate, has a source and a drain;a feedback loop to:- a feedback transistor (120);- a first resistor (118), which is coupled in series between an emitter of the feedback transistor (120) and the drain of the first mosfet (114) is connected;- a feedback element (122), which is designed, in order to establish a linear current to a collector of the feedback transistor (120), wherein the feedback element (122) with the collector of the feedback transistor (120) is connected; and- an operational amplifier (116), which receives a feedback voltage from a node between the feedback element (122) and the collector of the feedback transistor (120), wherein the operational amplifier (116) supplies an output (109), which as a gate expensive voltage (110) is used, wherein the gate expensive voltage (110) to the gate of the first mosfet (114) is received, wherein the gate expensive voltage (110) the transconductance of the first mosfet (114) and of the first resistor (118); anda second mosfet (108), a gate, a source and a drain, wherein the second mosfet (108) to the first mosfet (114) is adapted, wherein the gate of the second mosfet (108) is connected to the gate expensive voltage (110) to receive.n="27"
机译:栅极电压控制电路,其具有:第一mosfet(114),栅极,具有源极和漏极;反馈回路,用于:-反馈晶体管(120);-第一电阻器(118),其串联在第一和第二电阻之间。连接反馈晶体管(120)的发射极和第一MOSFET(114)的漏极;-反馈元件(122),其被设计用于建立到反馈晶体管(120)的集电极的线性电流),其中反馈元件(122)与反馈晶体管(120)的集电极相连; -运算放大器(116),其从反馈元件(122)和反馈晶体管(120)的集电极之间的节点接收反馈电压,其中,运算放大器(116)提供输出(109),使用栅极昂贵的电压(110),其中接收到第一MOSFET(114)的栅极的栅极昂贵的电压(110),其中栅极昂贵的电压(110)第一MOSFET(114)的跨导和第一电阻器(118)的数量;第二mosfet(108),栅极,源极和漏极,其中第二mosfet(108)至第一mosfet(114)适用,其中第二mosfet(108)的栅极连接至栅极昂贵电压(110)接收。n=“ 27”

著录项

  • 公开/公告号DE102010046112B4

    专利类型

  • 公开/公告日2018-06-21

    原文格式PDF

  • 申请/专利权人 MAXIM INTEGRATED PRODUCTS INC.;

    申请/专利号DE20101046112

  • 发明设计人 MARK JONES;

    申请日2010-09-21

  • 分类号H03F1/34;H03G1/04;H03G3/20;

  • 国家 DE

  • 入库时间 2022-08-21 12:35:09

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号