Translucent support for a semiconductive thin-film structure and method of making and using the translucent support

摘要

Translucent support (01) for a semiconductive thin-film structure (14) comprising a superstrate (03) with a top (05) provided for incident light (04) and a bottom (06) on which a light trapping structure improving the optical properties of the superstrate (03) (02), to which the thin-film structure (14) can be connected, wherein the light-trapping structure (02) consists of at least one sub-micron three-dimensional structure layer (09) of silicon oxide on the superstrate (03), characterized in that the three-dimensional structural layer ( 09) are formed as a homogeneous silicon dioxide layer having a periodic nanostructure (07) with a period P between 200 nm and 1000 nm and a first antireflection layer (10) following the structure layer (09) as a nanocrystalline titanium oxide layer or as a tin oxide layer, wherein the first antireflection layer ( 10) the height HN of the nanostructure (07) of the structural layer (09) by at least 30%, the height HL of the light trapping structure (02) is between 20 nm and 200 nm and the angle W between the surfaces (13) of the light trapping structure (02) and the bottom surface (06) of the superstrate (03) is not greater than 60 ° and that a passivation layer (12) is arranged on the light capture structure (02), wherein a temperature stability of the carrier (01) for a liquid phase crystallization is given.