Systems and methods for advanced infrared spectroscopic ellipsometry

摘要

Methods and systems for performing concurrent spectroscopic measurements of semiconductor structures at ultraviolet, visible, and infrared wavelengths are set forth herein. In another aspect, wavelength errors are reduced by orienting the direction of the wavelength dispersion on the detector surface perpendicular to the projection of the plane of incidence on the detector surface. In another aspect, a wide range of infrared wavelengths is detected by a detector including a plurality of photosensitive regions having different sensitivity characteristics. Captured light is scattered linearly across the surface on the detector, depending on the wavelength. Each of the different photosensitive areas is arranged on the detector to detect a different range of incident wavelengths. In this way, a wide range of infrared wavelengths having a high signal-to-noise ratio is detected by a single detector. These features enable measurements of high aspect ratio structures with high throughput, high precision, and high accuracy.