UTILISATION OF TRENCH-MOS-BARRIER-SCHOTTKY-DIODES (TMBS) AS RECTIFYING ELEMENTS OF A RECTIFIER BRIDGE CIRCUIT FOR AN ELECTRIC GENERATOR OF A CAR

摘要

The circuit has rectifying elements exhibiting reverse voltage drift when the elements are operated during breakdown of the voltage. The elements comprise a combination of pn-diodes, metal-oxide-semiconductor (MOS)-transistor and MOS-structure i.e. trench-MOS-structure, to determine the breakdown. The trench-MOS-structure is designed as a press diode i.e. trench-MOS-barier-schottky-diode, which exhibits a schottky-barrier of about 0.65 electron volt to 0.7 electron volt. The schottky-diode comprises schottky-barrier metal e.g. nickel or nickel silicide, and trenches of about 1-3 micrometer.