CRUCIBLE FOR DIRECTIONAL SOLIDIFICATION OF MULTI-CRYSTALLINE OR QUASI SINGLE CRYSTALLINE SILICON FROM SEEDS

摘要

The present invention relates to a crucible for directional solidification of a silicon ingot, said crucible comprising a mould intended to receive the molten silicon, and a removable element forming a barrier to the diffusion of metallic impurities and arranged on the base of the inner face of said mould, the removable element being totally or partially formed of a barrier layer formed by at least one material selected from the group comprising silica SiO2, silicon nitride Si3N4, silicon carbide SiC, silicon carbonitride, silicon oxynitride, graphite and mixtures thereof, and having a purity of at least 99.95 % by mass, the barrier layer having a thickness conducive to the retention of impurities capable of diffusing out of the base during the directional solidification and cooling of the silicon.