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SILVER ALLOY FILM, AND SPUTTERING TARGET FOR FORMING SILVER ALLOY FILM
SILVER ALLOY FILM, AND SPUTTERING TARGET FOR FORMING SILVER ALLOY FILM
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机译:银合金膜和形成银合金膜的溅射靶
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摘要
PROBLEM TO BE SOLVED: To provide an Ag alloy film that is excellent in migration resistance and sulfur resistance and to provide a sputtering target for forming an Ag alloy film that achieves film formation of an Ag alloy film having stable in-plane characteristics even when forming the film on a large-area substrate.;SOLUTION: The Ag alloy film has a composition containing 0.1-1.5 mass% In (both inclusive), 1-50 mass ppm Cu (both inclusive) and the balance Ag with inevitable impurities. The sputtering target 10 for forming an Ag alloy film has an oxygen concentration of less than 50 mass ppm, has an area of sputtering surface 11 of 0.25 m2 or more and has an in-plane concentration distribution of Cu: DCu=σCu/μCu×100 [%], defined by an average value μCu of Cu concentration analysis value and a standard deviation σCu of Cu concentration analysis value as determined by analyzing a Cu concentration at a plurality of places of the sputtering surface 11, of 40% or less.;COPYRIGHT: (C)2016,JPO&INPIT
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机译:解决的问题:提供一种具有优异的耐迁移性和耐硫性的Ag合金膜,并且提供一种用于形成Ag合金膜的溅射靶,该Ag合金膜即使在形成时也能够实现具有稳定的面内特性的Ag合金膜的成膜。解决方案:解决方案:Ag合金膜的成分为0.1-1.5质量%In(包括两端),1-50 ppm(Cu)(包括两端)和余量的Ag不可避免地带有杂质。用于形成Ag合金膜的溅射靶10的氧浓度小于50质量ppm,溅射表面11的面积为0.25m 2 Sup>以上,且面内浓度分布为Cu:D Cu Sub> =σ Cu Sub> /μ Cu Sub>×100 [%],由平均值μ Cu Sub定义通过分析在溅射表面11的多个位置处的Cu浓度等于或小于40%而确定的Cu浓度分析值的>和Cu浓度分析值的标准偏差σ Cu Sub>。 :(C)2016,JPO&INPIT
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