A MARCHING MEMORY, A BIDIRECTIONAL MARCHING MEMORY, A COMPLEX MARCHING MEMORY AND A COMPUTER SYSTEM, WITHOUT THE MEMORY BOTTLENECK

摘要

A marching memory includes an array of memory units (Ui, U₂, U₃,........., U_n-1, U_n), each of the memory units having a sequence of bit-level cells (M₁₁, M₂₁, M₃₁, ........, M_m-1,1, M_m1) so as to store information of byte size or word size. Each of the bit-level cells encompasses a transfer-transistor (Q₁₁₁) having a first main-electrode connected to a clock signal supply line (CLOCK) through a first delay element (D₁₁₁) and a control-electrode connected to an output terminal of a first neighboring bit-level cell disposed at input side of the array, through a second delay element (D₁₁₂), a reset-transistor (Q₁₁₂) having a control-electrode connected to the clock signal supply line, and a capacitor (C₁₁) connected in parallel with the reset-transistor.