首页> 外国专利> Single-walled carbon nanotube flexible transparent conductive film with carbon welded structure and preparation method thereof

Single-walled carbon nanotube flexible transparent conductive film with carbon welded structure and preparation method thereof

机译:具有碳焊接结构的单壁碳纳米管柔性透明导电膜及其制备方法

摘要

PROBLEM TO BE SOLVED: To provide a single-walled carbon nanotube flexible transparent conductive film having a carbon welded structure and a method for preparing the same. The present invention belongs to the field of preparing a high-performance flexible transparent conductive film, and particularly relates to a single-walled carbon nanotube flexible transparent conductive film having a carbon welded structure and a preparation method. In the growth process of single-walled carbon nanotubes by floating catalytic chemical vapor deposition, the concentration of catalyst and carbon source and the residence time in the constant temperature region are reduced, so that part of the carbon source decomposed into catalyst forms sp2 carbon island Then, the single-walled carbon nanotube thin film having the sp2 carbon island weld structure is finally formed by welding at the intersection between the single-walled carbon nanotubes. The thin film having the structure has photoelectric properties, chemical stability and flexibility superior to the ITO thin film on the flexible substrate. The present invention reduces the contact resistance between carbon nanotubes through the design and preparation of single carbon nanotubes connected by a carbon welded structure, suppresses the formation of bundles and a large amount of light absorption, and creates a high-performance flexible transparent conductive film. As a result, it has important implications for the application of carbon nanotube thin films in the field of high performance optoelectronic devices. [Selection] Figure 1
机译:解决的问题:提供一种具有碳焊接结构的单壁碳纳米管柔性透明导电膜及其制备方法。本发明属于制备高性能柔性透明导电膜的领域,尤其涉及一种具有碳焊接结构的单壁碳纳米管柔性透明导电膜及其制备方法。在单壁碳纳米管通过浮动催化化学气相沉积的生长过程中,催化剂和碳源的浓度以及在恒温区的停留时间降低,从而部分碳源分解成催化剂后形成sp2碳岛然后,通过在单壁碳纳米管之间的交点处进行焊接,最终形成具有sp 2碳岛焊接结构的单壁碳纳米管薄膜。具有该结构的薄膜具有优于柔性基板上的ITO薄膜的光电性能,化学稳定性和柔韧性。本发明通过设计和制备通过碳焊接结构连接的单个碳纳米管来降低碳纳米管之间的接触电阻,抑制束的形成和大量的光吸收,并且产生高性能的柔性透明导电膜。结果,它对碳纳米管薄膜在高性能光电器件领域的应用具有重要意义。 [选择]图1

著录项

  • 公开/公告号JP2019521943A

    专利类型

  • 公开/公告日2019-08-08

    原文格式PDF

  • 申请/专利权人 中国科学院金属研究所;

    申请/专利号JP20180564954

  • 发明设计人 侯 鵬翔;蒋 松;劉 暢;成 会明;

    申请日2017-06-06

  • 分类号C01B32/159;B01J31/22;C01B32/162;B82Y30;B82Y40;H01B5/14;H01B13;

  • 国家 JP

  • 入库时间 2022-08-21 12:22:03

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