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METHOD AND APPARATUS FOR REDUCING EROSION RATE OF SURFACE EXPOSED TO HALOGEN-CONTAINING PLASMA

机译:降低暴露于含卤素等离子体中的表面腐蚀速率的方法和装置

摘要

To provide a ceramic article having durability against erosion by a halogen-containing plasma to be used for semiconductor processing.SOLUTION: A method for producing an article having a coating durable against erosion by a halogen-containing plasma is provided, which uses technology selected from the group consisting of thermal spray, plasma spray, sputtering, chemical vapor phase deposition, and calcination. A ceramic coating is provided, which contains yttrium oxide at a concentration ranging from 80 mol% to 55 mol% and zirconium oxide at a concentration ranging from 20 mol% to 45 mol%. A method for producing a bulk ceramic article having durability against a halogen-containing plasma is provided, in which a bulk ceramic article is formed by sintering a green body, and by the sintering, a solid solution ceramic is formed. The solid solution ceramic contains yttrium oxide at a concentration ranging from 55 mol% to 80 mol% and zirconium oxide at a concentration ranging from 20 mol% to 45 mol%.SELECTED DRAWING: Figure 1A
机译:为了提供一种陶瓷制品,该陶瓷制品具有用于半导体加工的对含卤素的等离子体的侵蚀的耐久性。解决方案:提供了一种具有对含卤素的等离子体的侵蚀具有耐久性的涂层的制品的生产方法,其使用选自以下的技术:该组包括热喷涂,等离子喷涂,溅射,化学气相沉积和煅烧。提供了一种陶瓷涂层,其包含浓度为80mol%至55mol%的氧化钇和浓度为20mol%至45mol%的氧化锆。提供一种具有对含卤素的等离子体具有耐久性的块状陶瓷制品的制造方法,其中,通过烧结生坯形成块状陶瓷制品,并通过烧结形成固溶陶瓷。固溶陶瓷包含的氧化钇的浓度范围为55 mol%至80 mol%,以及氧化锆的浓度范围为20 mol%至45 mol%。图1A

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