窒化ホウ素膜の成長装置および方法

摘要

PROBLEM TO BE SOLVED: To form a uniform h-BN film more simply by using a horizontal type CVD device.;SOLUTION: A growing device of a boron nitride film includes a horizontal type (lateral type) reaction tube 101 having one end provided with an introduction port 102 for introducing raw material gas, and the other end provided with a discharge port 103, a raw material gas supply part 104 for supplying the raw material gas into the reaction tube 101 from the introduction port 102, and an auxiliary reaction tube 105 arranged inside the reaction tube 101. The auxiliary reaction tube 105 is arranged extendedly in the same direction as an extension direction of the reaction tube 101, and the auxiliary reaction tube 105 includes a closed part 106 on the introduction port 102 side, and an opening 107 on the discharge port 103 side.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2019,JPO&INPIT