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Gas doping system for controlled doping of melt of semiconductor grade material or solar grade material
Gas doping system for controlled doping of melt of semiconductor grade material or solar grade material
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机译:气体掺杂系统,用于对半导体级材料或太阳能级材料的熔体进行可控掺杂
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摘要
PROBLEM TO BE SOLVED: To provide a crystal lifting device for manufacturing an ingot.SOLUTION: The present invention includes a furnace and a gas doping system. The furnace includes a crucible for holding a melt. The gas doping system includes a supply pipe, an evaporation container, and a flow rate limiting device. The supply pipe is located in the furnace, and includes at least one supply pipe side wall, a first end part through which a solid dopant introduced into the supply pipe passes, and an opening part on the opposite side from the first end part through which a gas dopant introduced in the furnace passes. The evaporation container is configured to evaporate a dopant inside, and arranged nearby the opening of the supply pipe. The flow rate limiting device enables a solid dopant to move passing through the flow rate limiting device, and is configured to limit a flow of the gas dopant passing through the flow rate limiting device and also arranged in the supply between the first end and evaporation container.SELECTED DRAWING: Figure 1
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