表示装置および表示装置の製造方法

摘要

PROBLEM TO BE SOLVED: To easily lower the resistance of a source region and a drain region configured of an oxide semiconductor in a thin film transistor.;SOLUTION: A display device comprises a thin film transistor on a substrate. The thin film transistor comprises: a gate electrode; an oxide semiconductor film having a channel region opposite to the gate electrode, a source region on one side of the channel region and a drain region on the other side thereof; an inorganic insulation film disposed in contact with the oxide semiconductor film, and having a first connection hole; and a source electrode and a drain electrode respectively connected via the first connection hole to the source region and the drain region. The inorganic insulation film is configured of an insulation film containing metal and ion species used for ion implantation, and the oxide semiconductor film has a low resistance region containing the metal as a dopant in the source region and the drain region.;SELECTED DRAWING: Figure 2;COPYRIGHT: (C)2019,JPO&INPIT