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Multi-angled deposition and masking for custom spacer trim and selected spacer removal
Multi-angled deposition and masking for custom spacer trim and selected spacer removal
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机译:多角度沉积和掩膜,用于定制间隔件修整和选定的间隔件去除
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摘要
Multi-angled deposition and masking techniques are provided to enable custom trimming and selective removal of spacers that are used for patterning features at sub-lithographic dimensions. For example, a method includes forming a sacrificial mandrel on a substrate, and forming first and second spacers on opposing sidewalls of the sacrificial mandrel. The first and second spacers are formed with an initial thickness TS. A first angle deposition process is performed to deposit a material (e.g., insulating material or metallic material) at a first deposition angle A1 to form a first trim mask layer on an upper portion of the first spacer and the sacrificial mandrel while preventing the material from being deposited on the second spacer. A spacer etch process is performed to trim the first spacer to a first thickness T1, which is less than TS, using the first trim mask layer as an etch mask.
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机译:提供了多角度沉积和掩膜技术,以实现定制的修整和选择性去除用于在亚光刻尺寸下对特征进行图案化的间隔物。例如,一种方法包括在衬底上形成牺牲心轴,以及在牺牲心轴的相对侧壁上形成第一和第二隔离物。第一和第二间隔物形成为具有初始厚度T S Sub>。进行第一角度沉积工艺以第一沉积角度A 1 B>沉积材料(例如,绝缘材料或金属材料),以在第一间隔物的上部形成第一修整掩模层,并牺牲心轴,同时防止材料沉积在第二垫片上。使用第一修整掩模层作为蚀刻掩模,执行间隔物蚀刻工艺以将第一间隔物修整至小于T S Sub>的第一厚度T 1 B>。
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