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Asymmetric pedestal/carrier ring arrangement for edge impedance modulation

机译:用于边缘阻抗调制的非对称基座/载环结构

摘要

Pedestal assemblies and methods for using said pedestal assemblies, used in processing chambers implemented for processing substrates are disclosed. In one example, the pedestal assembly includes a center column coupled to a lower chamber body of a processing chamber. A pedestal body is coupled to the center column. The pedestal body includes a substrate support surface and an annular step formed around a circumference of the pedestal body and surrounding the substrate support surface. Further included is a first annular ring segment disposed within the annular step. The first annular ring is defined from a conductive material. A second annular ring segment is also disposed within the annular step. The second annular ring is defined from a dielectric material. The first annular ring and the second annular ring fill the annular step around the circumference of the pedestal body. The first and second annular rings provide a fill that surrounds the substrate support and acts to modify an impedance for improving azimuthal uniformity of films deposited over the substrate using the processing chamber.
机译:公开了基座组件和用于所述基座组件的方法,所述基座组件和方法用于实施为处理基板的处理室中。在一示例中,基座组件包括联接至处理室的下部室主体的中心柱。基座主体连接到中心柱。基座主体包括基板支撑表面和形成在基座主体的周围并围绕基板支撑表面的环形台阶。还包括布置在环形台阶内的第一环形环段。第一环形环由导电材料限定。第二环形环段也设置在环形台阶内。第二环形环由介电材料限定。第一环形圈和第二环形圈围绕基座主体的圆周填充环形台阶。第一环形环和第二环形环提供围绕衬底支撑件的填充物,并起到改变阻抗的作用,以改善使用处理室沉积在衬底上的膜的方位均匀性。

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