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Density-controllable dummy fill strategy for near-MRAM periphery and far-outside-MRAM logic regions for embedded MRAM technology and method for producing the same
Density-controllable dummy fill strategy for near-MRAM periphery and far-outside-MRAM logic regions for embedded MRAM technology and method for producing the same
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机译:用于嵌入式MRAM技术的近MRAM外围和远MRAM逻辑区域的密度可控虚拟填充策略及其制造方法
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摘要
Methods of forming a MTJ dummy fill gradient across near-active-MRAM-cell periphery and far-outside-MRAM logic regions and the resulting device are provided. Embodiments include providing an embedded MRAM layout with near-active-MRAM-cell periphery logic and far-outside-MRAM logic regions; forming a MTJ structure within the layout based on minimum space and distance rules relative to a first metal layer, a second metal layer, and/or both the first and second metal layers; forming a high-density MTJ dummy structure in the near-active-MRAM-cell periphery logic region based on second minimum space and distance rules relative to a first metal layer, a second metal layer, and/or both the first metal layer and the second metal layer; and forming a low-density MTJ dummy structure in the far-outside-MRAM logic region based on third minimum space and distance rules relative to a first metal layer, a second metal layer, and/or both the first metal layer and the second metal layer.
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