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III-nitride light emitting device with a region including only ternary, quaternary, and/or quinary III-nitride layers

机译：具有仅包括三元，四元和/或五元III族氮化物层的区域的III族氮化物发光器件

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摘要

A device includes a substrate (10) and a III-nitride structure (15) grown on the substrate, the III-nitride structure comprising a light emitting layer (16) disposed between an n-type region (14) and a p-type region (18). The substrate is a RA0₃(MO)_nwhere R is one of a trivalent cation: Sc, In, Y and a lanthanide; A is one of a trivalent cation: Fe (III), Ga and Al; M is one for a divalent cation: Mg, Mn, Fe (II), Co, Cu, Zn and Cd; and n is an integer≥1. The substrate has an inplane lattice constant a_substrate. At lease one III-nitride layer in the III-nitride structure has a bulk lattice constant a_layersuch that [(|a_substrate−a_layer|)/a_substrate]*100% is no more than 1%.

机译：器件包括衬底（ 10 ）和在衬底上生长的III族氮化物结构（ 15 ），该III族氮化物结构包括发光层（ 16 ）设置在n型区域（ 14 ）和p型区域（ 18 ）之间。底物是RA0 _{3 （MO）_{n ，其中R是三价阳离子之一：Sc，In，Y和镧系元素; A是三价阳离子之一：Fe（III），Ga和Al; M是二价阳离子的一个：Mg，Mn，Fe（II），Co，Cu，Zn和Cd; n是≥1的整数。衬底具有面内晶格常数a _{substrate 。至少，III族氮化物结构中的一个III族氮化物层具有体晶格常数a _{层，使得[（| a _{衬底 -a _{层 |）/ a _{substrate ] * 100％不超过1％。}}}}}}} 展开▼

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公开/公告号US10304997B2

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公开/公告日2019-05-28

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申请/专利权人 MICHAEL JASON GRUNDMANN;NATHAN FREDERICK GARDNER;WERNER KARL GOETZ;MELVIN BARKER MCLAURIN;JOHN EDWARD EPLER;FRANCISCO ALEXANDER LEON;
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申请/专利号US201113882744

发明设计人 MICHAEL JASON GRUNDMANN;NATHAN FREDERICK GARDNER;WERNER KARL GOETZ;MELVIN BARKER MCLAURIN;JOHN EDWARD EPLER;FRANCISCO ALEXANDER LEON;
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申请日2011-10-27

分类号H01L33;H01L33/32;H01L21/02;H01L33/10;H01L33/12;H01L33/06;H01S5/02;H01S5/183;H01S5/323;

国家 US

入库时间 2022-08-21 12:13:30

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2. 具有氮化铟镓三元合金层和第二III族氮化物三元合金层的异质结的半导体器件 [P] . 中国专利： CN111466012A . 2020-07-28

3. Group III-nitride light-emitting device, e.g. light-emitting diode, comprises active region between first layers of first and second conductivity types, tunnel junction between first and second layers of first conductive type, and contacts [P] . 德国专利： DE102004050891A1 . 2006-04-20

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4. Light emitting group III-nitride arrangement comprises substrate, an n-region lying on substrate, an active region lying over the n-region, smooth layer containing indium arranged between the substrate and active region, and spacer layer [P] . 德国专利： DE10213395A1 . 2002-10-10

机译：发光III族氮化物装置包括衬底，位于衬底上的n区域，位于n区域上方的有源区域，包含布置在衬底与有源区域之间的包含铟的平滑层以及间隔层

5. Light emitting III-nitride arrangement used as light emitting diode comprises a substrate, an n-region lying on substrate, an active region lying on n-region, and a smooth region containing indium between substrate and active region [P] . 德国专利： DE10213358A1 . 2002-10-10

机译：用作发光二极管的发光III族氮化物装置包括基板，位于基板上的n区域，位于n区域上的有源区域以及在基板和有源区域之间包含铟的平滑区域

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