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Epitaxial quartz homeotypes crystal growth on beta quartz for pressure sensors and accelerometers

机译:在压力传感器和加速度计的β石英上外延石英定型晶体生长

摘要

The purpose of quartz homeotypes grown epitaxially on beta quartz for use in pressure sensors or accelerometers is to be able to drastically cut down production costs on otherwise expensive or time-consuming to grow crystals that are necessary in various industrial applications. This is done via epitaxial growth of quartz homeotypes across the whole surface of a sample of beta quartz, an easily accessible and high temperature capable crystal. This invention also applies to the epitaxial application of piezoelectric material atop a piezoelectric crystal for the purpose of altering its piezoelectric coefficient and the epitaxial application of a piezoelectric crystal atop a host crystal for the purpose of increasing its insulation resistance.
机译:在压力传感器或加速度计中使用在β石英上外延生长的石英同型异形的目的是,能够大幅度降低生产成本,而这些成本原本是昂贵或费时的,而晶体生长是各种工业应用所必需的。这是通过在β石英样品的整个表面上外延生长石英同型型而完成的,该样品是一种易于获取且具有高温能力的晶体。本发明还适用于为了改变压电系数而将压电材料外延施加在压电晶体上,以及为了增加绝缘电阻而将压电晶体外延施加于主晶体上。

著录项

  • 公开/公告号US10240252B2

    专利类型

  • 公开/公告日2019-03-26

    原文格式PDF

  • 申请/专利权人 DANIEL SMITH;

    申请/专利号US201715530412

  • 发明设计人 DANIEL SMITH;

    申请日2017-01-10

  • 分类号C30B19/12;C30B19/08;C30B7/10;C30B19/02;C30B25/18;C30B29/18;C30B29/14;C30B29/22;C30B23/02;H01L41/187;H01L41/316;H01L41/317;

  • 国家 US

  • 入库时间 2022-08-21 12:12:34

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