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Magnetic memory device with stack structure including first and second magnetic layers and nonmagnetic layer between the first and second magnetic layers
Magnetic memory device with stack structure including first and second magnetic layers and nonmagnetic layer between the first and second magnetic layers
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机译:具有堆叠结构的磁存储器件,其包括第一和第二磁性层以及在第一和第二磁性层之间的非磁性层
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摘要
According to one embodiment, a magnetic memory device includes a stack structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a first layer containing iron (Fe) and boron (B), a second layer containing iron (Fe) and boron (B), and a third layer provided between the first layer and the second layer and containing a semiconductor.
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