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Method and apparatus for protecting gate-source junction of low-voltage MOSFET in high-voltage circuit
Method and apparatus for protecting gate-source junction of low-voltage MOSFET in high-voltage circuit
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机译:保护高压电路中低压MOSFET的栅极-源极结的方法和装置
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摘要
A high-voltage circuit has a protection circuit protecting a low-voltage MOSFET. A first MOSFET, a low-voltage device with a gate coupled to an input voltage, is coupled in a series with a second MOSFET which is a high-voltage device, both of a first conductivity type. A protection circuit includes a third, a fourth, and a fifth MOSFET. The third MOSFET has a second conductivity type and source and body coupled to the input voltage. The fourth MOSFET has the first conductivity type and a drain coupled to a drain of the third MOSFET, a gate coupled to a second bias voltage, and a source and a body coupled to the first power terminal. The fifth MOSFET has the first conductivity type and a drain coupled to the input voltage, a gate coupled to the drain of the fourth MOSFET, and a source coupled to the first power terminal.
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