首页>
外国专利>
Aluminum nitride-aluminum oxide layers for enhancing the efficiency of group III-nitride light-emitting devices
Aluminum nitride-aluminum oxide layers for enhancing the efficiency of group III-nitride light-emitting devices
展开▼
机译:氮化铝-氧化铝层,用于增强III族氮化物发光器件的效率
展开▼
页面导航
摘要
著录项
相似文献
摘要
Light-emitting devices having a multiple quantum well (MQW) diode structure and methods of making and using the devices are provided. The devices include aluminum nitride/aluminum oxide bilayers on their hole injection layers. The bilayers improve the energy efficiency of the devices, with respect to devices that lack the bilayers or that include only a layer of aluminum oxide on their hole injection layers.
展开▼