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HYBRID BONDING MATERIALS COMPRISING BALL GRID ARRAYS AND METAL INVERSE OPAL BONDING LAYERS, AND POWER ELECTRONICS ASSEMBLIES INCORPORATING THE SAME
HYBRID BONDING MATERIALS COMPRISING BALL GRID ARRAYS AND METAL INVERSE OPAL BONDING LAYERS, AND POWER ELECTRONICS ASSEMBLIES INCORPORATING THE SAME
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机译:包含球形网格和金属反蛋白石粘合层的混合键合材料,以及包含相同元素的功率电子组件
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摘要
A hybrid bonding layer includes a metal inverse opal (MIO) layer with a plurality of hollow spheres and a predefined porosity, and a ball grid array (BGA) disposed within the MIO layer. The MIO layer and the BGA may be disposed between a pair of bonding layers. The MIO layer and the BGA each have a melting point above a TLP sintering temperature and the pair of bonding layers each have a melting point below the TLP sintering temperature such that the hybrid bonding layer can be transient liquid phase bonded between a substrate and a semiconductor device. The pair of bonding layers may include a first pair of bonding layers with a melting point above the TLP sintering temperature and a second pair of bonding layers with a melting point below the TLP sintering temperature.
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