首页> 外国专利> MEMORY SYSTEM, MEMORY CONTROLLER FOR MEMORY SYSTEM, OPERATION METHOD OF MEMORY CONTROLLER, AND OPERATION METHOD OF USER DEVICE INCLUDING MEMORY DEVICE

MEMORY SYSTEM, MEMORY CONTROLLER FOR MEMORY SYSTEM, OPERATION METHOD OF MEMORY CONTROLLER, AND OPERATION METHOD OF USER DEVICE INCLUDING MEMORY DEVICE

机译:存储器系统,用于存储器系统的存储器控​​制器,存储器控制器的操作方法以及包括存储器的用户设备的操作方法

摘要

A system includes: a nonvolatile memory; a memory controller configured to control the nonvolatile memory, the memory controller including a first buffer memory for temporarily storing write data to be written to the nonvolatile memory; and a second buffer memory having a lower operational speed and a higher memory capacity than the first buffer memory. The memory controller is configured to transmit the write data from the first buffer memory to the second buffer memory and to the nonvolatile memory, and to release an operational state of the first buffer memory after transmitting the write data from the first buffer memory to the second buffer memory and to the nonvolatile memory. Writing additional write data to the first buffer memory is prohibited prior to the release of the operational state of the first buffer memory, and is permitted after the release of the operational state of the first buffer memory.
机译:一种系统,包括:非易失性存储器;存储控制器,被配置为控制非易失性存储器,该存储控制器包括第一缓冲存储器,用于临时存储要被写入非易失性存储器的写数据;第二缓冲存储器具有比第一缓冲存储器低的操作速度和较高的存储容量。存储器控制器被配置为将写数据从第一缓冲存储器传输到第二缓冲存储器以及非易失性存储器,并且在将写数据从第一缓冲存储器传输到第二缓冲存储器之后释放第一缓冲存储器的操作状态。缓冲存储器和非易失性存储器。在释放第一缓冲存储器的操作状态之前禁止向第一缓冲存储器写入额外的写数据,并且在释放第一缓冲存储器的操作状态之后允许将额外的写数据写入第一缓冲存储器。

著录项

  • 公开/公告号US2019004949A1

    专利类型

  • 公开/公告日2019-01-03

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号US201815871283

  • 发明设计人 JINWOO KIM;KUI-YON MUN;CHUL LEE;

    申请日2018-01-15

  • 分类号G06F12/084;G06F3/06;G06F13/16;

  • 国家 US

  • 入库时间 2022-08-21 12:06:27

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