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PRODUCTION PROCESS FOR HIGHLY CONDUCTING AND ORIENTED GRAPHENE FILM

机译:高导电定向石墨膜的生产工艺

摘要

A process for producing a highly conducting film of conductor-bonded graphene sheets that are highly oriented, comprising: (a) preparing a graphene dispersion or graphene oxide (GO) gel; (b) depositing the dispersion or gel onto a supporting solid substrate under a shear stress to form a wet layer; (c) drying the wet layer to form a dried layer having oriented graphene sheets or GO molecules with an inter-planar spacing d002 of 0.4 nm to 1.2 nm; (d) heat treating the dried layer at a temperature from 55° C. to 3,200° C. for a desired length of time to produce a porous graphitic film having pores and constituent graphene sheets or a 3D network of graphene pore walls having an inter-planar spacing d002 less than 0.4 nm; and (e) impregnating the porous graphitic film with a conductor material that bonds the constituent graphene sheets or graphene pore walls to form the conducting film.
机译:一种制备高度取向的导体结合的石墨烯片的高导电膜的方法,其包括:(a)制备石墨烯分散体或氧化石墨烯(GO)凝胶; (b)在剪切应力下将分散体或凝胶沉积到支撑固体基质上以形成湿层; (c)干燥湿层,以形成具有取向石墨烯片或GO分子的干燥层,该石墨烯片或GO分子的平面间距d 002 为0.4nm至1.2nm; (d)将干燥的层在55℃至3,200℃的温度下热处理所需的时间长度,以产生具有孔和组成石墨烯片的多孔石墨膜或具有相互间的石墨烯孔壁的3D网络。 -平面间距d 002 小于0.4 nm; (e)用将构成石墨烯片或石墨烯孔壁结合的导电材料浸渍多孔石墨膜以形成导电膜。

著录项

  • 公开/公告号US2019088383A1

    专利类型

  • 公开/公告日2019-03-21

    原文格式PDF

  • 申请/专利权人 NANOTEK INSTRUMENTS INC.;

    申请/专利号US201816193240

  • 发明设计人 ARUNA ZHAMU;BOR Z. JANG;

    申请日2018-11-16

  • 分类号H01B1/04;C23C14/06;C23C16/26;C23C18/16;C25D5/54;C01B32/184;C01B32/19;C23C18/40;C25D3/22;

  • 国家 US

  • 入库时间 2022-08-21 12:06:15

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