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RESISTIVE RANDOM ACCESS MEMORY (RRAM) DEVICE, WRITE VERIFY METHOD AND REVERSE WRITE VERIFY METHOD THEREOF
RESISTIVE RANDOM ACCESS MEMORY (RRAM) DEVICE, WRITE VERIFY METHOD AND REVERSE WRITE VERIFY METHOD THEREOF
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机译:电阻式随机存取存储器(RRAM)装置,其写入验证方法及其反向写入验证方法
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摘要
This invention introduces a resistive random access memory (RRAM) device, a write verify method and a reverse write verify thereof which are capable of improving the performance of RRAM operations and improving the uniform performance for each RRAM cell. A first resistance value sensed from a RRAM cell is compared with a plurality of reference resistance values to obtain a comparison value. A set or a reset operation is performed on the RRAM cell by applying a first set or reset pulse to change the first resistance value to a second resistance value. Next, the second resistance value is compared with the comparison value to determine whether to continue the set or reset operation on the RRAM cell.
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