首页> 外国专利> Magnetic memory device including upper structure having first portion and second portion surrounding first portion and formed of material different from that of first portion, and method of manufacturing the same

Magnetic memory device including upper structure having first portion and second portion surrounding first portion and formed of material different from that of first portion, and method of manufacturing the same

机译:包括上部结构的磁存储装置及其制造方法,该磁存储装置包括具有第一部分和围绕第一部分的第二部分并且由与第一部分不同的材料形成的上部结构

摘要

According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic layer, and an upper structure provided on the stacked structure, and including a first portion and a second portion surrounding the first portion and formed of material different from that of the first portion.
机译:根据一个实施例,磁存储器件包括:堆叠结构,其包括磁性层;以及上部结构,其设置在该堆叠结构上,并且包括第一部分和围绕第一部分的第二部分,该第二部分由与第一部分和第二部分不同的材料形成。第一部分。

著录项

  • 公开/公告号US10177302B2

    专利类型

  • 公开/公告日2019-01-08

    原文格式PDF

  • 申请/专利权人 TOSHIBA MEMORY CORPORATION;

    申请/专利号US201615069718

  • 发明设计人 SHUICHI TSUBATA;MASATOSHI YOSHIKAWA;

    申请日2016-03-14

  • 分类号H01L29/82;H01L29/84;H01L43/02;H01L43/08;H01L43/12;H01L27/22;G11C11/16;

  • 国家 US

  • 入库时间 2022-08-21 12:04:16

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