首页> 外国专利> FREMGANGSMÅDE TIL STYRING AF TO ELEKTRISK I SERIE FORBUNDNE OMVENDT LEDENDE IGBTS AF EN HALVBRO

FREMGANGSMÅDE TIL STYRING AF TO ELEKTRISK I SERIE FORBUNDNE OMVENDT LEDENDE IGBTS AF EN HALVBRO

机译:半桥串联连接的无刷导电IGBT中的两个电气控制程序

摘要

A method for controlling two electrically series-connected reverse-conductive (RC) IGBTs (RC-IBGT) of a half bridge is disclosed, wherein an operating DC voltage is applied across the series connection and one of the two series-connected reverse-conductive IGBTs operates in IGBT mode and another of the two series-connected reverse-conductive IGBTs operates in diode mode, and wherein each of the two reverse-conductive IGBTs has three switching states “+15V”, “0V”, “−15V”. The RC-IGBT T1 operated in diode mode does not go into the switching state (−15V) of highly charged carrier concentration, but instead into a state of medium charge carrier concentration associated with the switching state “0V”, and not into the switching state “−15V”, as is known from conventional methods. This reduces the reverse-recovery without adversely affecting the forward voltage.
机译:公开了一种用于控制半桥的两个电串联的反向导电IGBT(RC-IBGT)的方法,其中,在串联连接两端施加工作DC电压,并且两个串联的反向导电IGBT中的一个IGBT以IGBT模式工作,两个串联的反向导电IGBT中的另一个以二极管模式工作,其中两个反向导电IGBT中的每一个具有三个开关状态``+ 15V'',``0V'',``-'' 15V。以二极管模式工作的RC-IGBT T1不会进入高电荷载流子浓度的开关状态(-15V),而是进入与开关状态“ 0V”相关的中等电荷载流子浓度的状态,而不是进入如常规方法所知,开关状态为“ -15V”。这减少了反向恢复,而不会不利地影响正向电压。

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