首页> 外国专利> Method for producing doped carbon layers on metallic layers by RF PACVD method

Method for producing doped carbon layers on metallic layers by RF PACVD method

机译:通过RF PACVD法在金属层上制备掺杂碳层的方法

摘要

the object of the application is the manufacture of carbon doped layers on substrates like metallic rf method pacvd, characterised by the fact that in the reactor plazmowo - chemical, during affixing carbon layer.leads simultaneously process spraying material admixture with additional high frequency electrodes reactor supplied with potential negative individual energy sources by ion bombardment of the electrodes, where the plasma high frequency.
机译:该应用的目的是在诸如金属射频法pacvd之类的基材上制造碳掺杂层,其特征在于,在反应堆中,plazmowo-化学制品在粘贴碳层的过程中同时引导喷涂材料与提供的附加高频电极反应器的混合具有潜在的负单个能量源,通过离子轰击电极,其中等离子体为高频。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号