A relaxor-PT based piezoelectric crystal is disclosed, comprising the general formula of (Pb1-1.5xMx){[(MI,MII)1-z(MI',MII')z]1-yTiy}O3, wherein: M is a rare earth cation; MI is selected from the group consisting of Mg2+, Zn2+, Yb3+, Sc3+, and In3+; MII is Nb5+; MI' is selected from the group consisting of Mg2+, Zn2+, Yb3+, Sc3+, In3+, and Zr4; MII' is Nb5+ or Zr4+; 0 x ≤ 0.05; 0.02 y 0.7; and 0 ≤ z ≤ 1, provided that if either MI' or MII' is Zr4+, both MI' and MII' are Zr4+. A method for forming the relaxor-PT based piezoelectric crystal is disclosed, comprising pre-synthesizing precursor materials by calcining mixed oxides, mixing the precursor materials with single oxides and calcining to form a feeding material, and growing the relaxor-PT based piezoelectric crystal having the general formula of (Pb1-1.5xMx){[(MI,MII)1-z(MI',MII')z]1-yTiy}O3 from the feeding material by a Bridgman method.
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机译：公开了一种基于弛豫PT的压电晶体，其包含通式为（Pb 1-1.5x M x ）{[（（M I ，M II ） 1-z （M I'，M II'） z ] 1-y Ti y } O 3 ，其中：M为稀土阳离子; MI选自Mg 2 + ，Zn 2 + ，Yb 3 + ，Sc 3 + 和In 3 + ; MII为Nb 5 + ; M I'选自Mg 2 + ，Zn 2 + ，Yb 3 + ， Sc 3 + ，In 3 + 和Zr 4 ; M II'为Nb 5 + 或Zr 4 + ; 0 4 + ，则M I'和M II'是Zr 4 + 。公开了一种形成弛豫-PT基压电晶体的方法，该方法包括通过煅烧混合氧化物来预合成前驱体材料，将前驱体材料与单一氧化物混合并煅烧以形成进料，并生长具有以下特征的弛豫-PT基压电晶体： （Pb 1-1.5x M x ）的通式{[（M I ，M II ） 1-z （M I'，M II'） z ] 1-y Ti y } O 3 。
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