Solar cell emitter region fabrication with differentiated P-type and N-type region architectures

摘要

#$%^&*AU2019250255A120191107.pdf#####SOLAR CELL EMITTER REGION FABRICATION WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES ABSTRACT A back contact solar cell, comprising: a substrate having a light-receiving surface and a back surface; a first polycrystalline silicon emitter region of a first conductivity type disposed on a first thin dielectric layer disposed on the back surface of the substrate; a second polycrystalline silicon emitter region of a second, different, conductivity type disposed on a second thin dielectric layer disposed on the back surface of the substrate; a third thin dielectric layer disposed laterally directly between the first and second polycrystalline silicon emitter regions; a first conductive contact structure disposed on the first polycrystalline silicon emitter region; and a second conductive contact structure disposed on the second polycrystalline silicon emitter region.