ACOUSTIC MANAGEMENT IN INTEGRATED CIRCUIT USING PHONONIC BANDGAP STRUCTURE

摘要

An encapsulated integrated circuit (100) includes an integrated circuit (IC) die (102). A phonon device (1 10, 111) is fabricated on the IC die (102) that is configured to emit (112) or to receive (113) phonons that have a range of ultrasonic frequencies. An encapsulation material (120) encapsulates the IC die (102). A phononic bandgap structure (121, 123) is included within the encapsulation material (120) that is configured to have a phononic bandgap with a frequency range that includes at least a portion of the range of ultrasonic frequencies. A phononic channel (115) is located in the phononic bandgap structure (121, 123) between the phonon device (110, 111) and a surface of the encapsulated IC die (102).