首页> 外国专利> RADIO FREQUENCY POWER AMPLIFIER WITH HARMONIC CONTROL CIRCUIT AS WELL AS METHOD FOR MANUFACTURING THE SAME

RADIO FREQUENCY POWER AMPLIFIER WITH HARMONIC CONTROL CIRCUIT AS WELL AS METHOD FOR MANUFACTURING THE SAME

机译:具有谐波控制电路的射频功率放大器及其制造方法

摘要

Radio frequency power amplifier with harmonic control circuit as well as method for manufacturing the same are disclosed. According to an embodiment, a radio frequency power amplifier includes: a planar dielectric substrate (60), a first conductive layer (61) and a second conducting layer (62). The first conductive layer (61) is disposed on a first side of the planar dielectric substrate (60). The second conducting layer (62) is disposed on a second side of the planar dielectric substrate (60). The first conductive layer (61) has a pattern comprising one or more harmonic control circuits (51). The second conductive layer (62) acts as a ground plane. The second side of the planar dielectric substrate (60) is opposite to the first side of the planar dielectric substrate (60).
机译:公开了一种具有谐波控制电路的射频功率放大器及其制造方法。根据一个实施例,一种射频功率放大器包括:平面介电衬底(60),第一导电层(61)和第二导电层(62)。第一导电层(61)设置在平面介电基板(60)的第一侧上。第二导电层(62)设置在平面介电基板(60)的第二侧上。第一导电层(61)具有包括一个或多个谐波控制电路(51)的图案。第二导电层(62)用作接地平面。平面电介质基板(60)的第二侧与平面电介质基板(60)的第一侧相反。

著录项

  • 公开/公告号WO2019200532A1

    专利类型

  • 公开/公告日2019-10-24

    原文格式PDF

  • 申请/专利号WO2018CN83383

  • 发明设计人 HE CHEN;

    申请日2018-04-17

  • 分类号H03F3/26;H03F1/56;

  • 国家 WO

  • 入库时间 2022-08-21 11:52:46

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