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MODIFIED POLYSILAZANE FILM AND METHOD FOR PRODUCING GAS BARRIER FILM

机译:改性聚硅氮烷薄膜及其制备气体阻挡薄膜的方法

摘要

A suitable modified polysilazane film as an intermediate material for forming a predetermined gas barrier film and a method for producing a gas barrier film having excellent gas barrier properties using such a modified polysilazane film as an intermediate material to provide. A modified polysilazane film formed by forming a modified polysilazane layer on a substrate and a method for producing a gas barrier film made of such an intermediate material, wherein the thickness of the modified polysilazane layer is set to a value within a range of 10 to 500 nm, Further, the refractive index of the modified polysilazane layer is set to a value within a range of 1.48 to 1.63.
机译:合适的改性聚硅氮烷膜作为用于形成预定的阻气膜的中间材料,以及使用这种改性聚硅氮烷膜作为中间材料来提供具有优异的阻气性的阻气膜的制造方法。通过在基板上形成改性聚硅氮烷层而形成的改性聚硅氮烷膜和由这种中间材料制成的阻气膜的制造方法,其中将改性聚硅氮烷层的厚度设定为10至500范围内的值。另外,将改性聚硅氮烷层的折射率设定为1.48〜1.63的范围内的值。

著录项

  • 公开/公告号KR101921131B1

    专利类型

  • 公开/公告日2018-11-22

    原文格式PDF

  • 申请/专利权人 린텍 가부시키가이샤;

    申请/专利号KR20137030341

  • 发明设计人 나가나와 사토시;스즈키 유타;

    申请日2012-07-12

  • 分类号C08J7/04;B32B9;C08J3/28;C08J5/18;C08L83/16;

  • 国家 KR

  • 入库时间 2022-08-21 11:52:08

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