High sensitivity avalanche photo diode and manufacturing method thereof

摘要

The present invention relates to a high-sensitive avalanche photo diode improving light receiving sensitivity and a manufacturing method thereof. The high-sensitive avalanche photo diode comprises: first, second, and third epi layers sequentially stacked on a substrate; a focusing layer disposed in a first epi layer and focusing electron in an electron-hole pair formed according to light reception; an acceleration layer disposed in a second epi layer to be in contact with the focusing layer and accelerating the focused electron; a multiplication layer disposed in a third epi layer to be in contact with the acceleration layer and multiplying the accelerated electron; an edge layer annularly disposed on the third epi layer around the multiplication layer to relax electric field crowding of the multiplication layer; and an n+ion implantation layer including upper surfaces of the multiplication layer and the edge layer and disposed on the third epi layer.