PHOTOMASK BLANK AND MAKING METHOD PHOTOMASK LIGHT PATTERN EXPOSURE METHOD AND DESIGN METHOD OF TRANSITION METAL/SILICON BASE MATERIAL FILM

摘要

The present invention provides a photomask blank having a transition metal/silicon based material film composed of a transition metal/silicon based material, which comprises a transition metal, silicon, oxygen and nitrogen, wherein 3 atom% or more of oxygen is contained, and satisfies a mathematical formula represented by 4×C_Si/100-6×CM/1001, wherein C_Si represents a content of silicon (atom%) and the C_M represents a content (atom%) of a transition metal. The photomask shows inhibited deterioration of pattern dimension variation accompanied by a film quality change of the photomask due to irradiated light even when accumulated irradiation energy amount is large when performing pattern exposure using short wavelength light of high energy compared to conventional pattern exposure such as ArF excimer laser light.