Correlated electron devices using dopant species diffused from the surrounding structure

摘要

BACKGROUND OF THE INVENTION [0002] The present invention relates generally to the fabrication of correlated electronic materials used, for example, to perform switching functions. In embodiments, the correlating electron material may be doped using a dopant species derived from one or more precursors used to fabricate a surrounding structure, such as, for example, a conductive substrate or a conductive overlay.