首页> 外国专利> 2D DNA Electrochemical Method for Detecting DNA using semiconductor 2-dimensional crystal

2D DNA Electrochemical Method for Detecting DNA using semiconductor 2-dimensional crystal

机译:半导体二维晶体检测DNA的2D DNA电化学方法

摘要

The present invention relates to a method for electrochemical detection of target DNA, which uses a semiconductor 2D crystal material to increase the detection speed, sensitivity, and selectivity more simply and efficiently. The method of the present invention increases the DNA detection rate by at least 4 times by using a semiconductor 2D material which is precipitated four times faster than conventional graphene as an additive after adsorbing single stranded DNA that is not hybridized with the dye. In addition, since the present invention is an electrochemical method using a semiconductor 2D material as an additive, a coating process in the form of a complex with a conductive material or a process using a fluorescent dye as a marker is not needed compared with a conventional MoS2-based DNA sensor, DNA can be measured economically. Further, the graphene must be surface treated to induce sedimentation at an appropriate speed (rapid precipitation occurs when the surface treatment is not performed). However, it has been difficult to add a process and ensure uniformity due to such surface treatment. However, Since the semiconductor 2D material to be used does not need such a surface treatment process, measurement reproducibility and reliability can be improved as compared with the method using graphene.
机译:靶DNA的电化学检测方法技术领域本发明涉及一种靶DNA的电化学检测方法,该方法使用半导体2D晶体材料来更简单有效地提高检测速度,灵敏度和选择性。本发明的方法通过使用半导体2D材料将DNA检测率提高至少4倍,所述半导体2D材料在吸附未与染料杂交的单链DNA之后以比常规石墨烯快四倍的速度沉淀作为添加剂。另外,由于本发明是使用半导体2D材料作为添加剂的电化学方法,因此与常规技术相比,不需要与导电材料形成复合物形式的涂覆工艺或使用荧光染料作为标记的工艺。基于MoS2的DNA传感器,可以经济地测量DNA。此外,必须对石墨烯进行表面处理以使其以适当的速度沉淀(当不进行表面处理时会迅速沉淀)。然而,由于这种表面处理,很难增加工艺并确保均匀性。然而,由于要使用的半导体2D材料不需要这种表面处理工艺,因此与使用石墨烯的方法相比,可以提高测量的再现性和可靠性。

著录项

  • 公开/公告号KR101941771B1

    专利类型

  • 公开/公告日2019-01-24

    原文格式PDF

  • 申请/专利权人 가천대학교 산학협력단;

    申请/专利号KR20170052108

  • 发明设计人 이은철;이이란;

    申请日2017-04-24

  • 分类号C12Q1/68;

  • 国家 KR

  • 入库时间 2022-08-21 11:49:18

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号