Low Pressure Chemical Vapor Deposition Equipment of Perovskite Thin Films, Their Application and Application

摘要

The present invention relates to a low pressure chemical vapor deposition apparatus for a perovskite thin film, a method of using the same, and a method of using the apparatus. The apparatus includes a main chamber, two precursor heating plates and a substrate fixing groove in the main chamber, Wherein a plurality of substrates for depositing a thin film are placed on the substrate fixing grooves, two substrates are placed so that the substrates of the respective groups are opposed to each other, and the surfaces on which the thin films of the two substrates are to be deposited, Towards one end of the chamber; The left and right ends of the main chamber are respectively connected to a carrier gas pipe having a carrier gas intake control valve, a vacuum chamber is connected to the main chamber, and a main chamber heating device for heating the substrate is further installed in the main chamber; A solvent evaporator is connected to each of the carrier gas pipes at both ends. The present invention adopts an arrangement in which both sides of the main chamber are simultaneously sucked and the substrates abut against each other, so that the speed of manufacturing the perovskite thin film using this method is twice that of the conventional method.