METHOD OF FORMING A PATTERN USING ION BEAMS OF BILATERAL SYMMETRY METHOD OF FORMING A MAGNETIC MEMORY DEVICE USING THE SAME AND ION BEAM APPARATUS GENERATION ION BEAMS OF BILATERAL SYMMETRY

摘要

The pattern forming method includes: forming a film to be etched on a substrate; providing a first ion beam irradiated with a first incident angle onto a surface of the film to be etched and a second ion beam irradiated with a second incident angle; and And patterning the etch target film using the first ion beam and the second ion beam to form patterns. Wherein the first ion beam and the second ion beam are symmetrical with respect to a normal normal to the upper surface of the substrate. Wherein each of the first incident angle and the second incident angle is smaller than an angle obtained by subtracting the first angle from 90 DEG with respect to the normal line, wherein the first angle is defined by the following equation (1). [Equation 1] alpha = arctan (B / A) Where A is the first angle, A is the spacing between the patterns, and B is the height of each of the patterns.