首页> 外国专利> DEVICE FOR ELECTRIC CURRENT GENERATION BY MEANS OF TRANSFER OF ENERGY OF RADIOCHEMICAL BETA-DECAY S-14

DEVICE FOR ELECTRIC CURRENT GENERATION BY MEANS OF TRANSFER OF ENERGY OF RADIOCHEMICAL BETA-DECAY S-14

机译:通过放射化学β-衰变S-14的能量转移方式产生电流的装置

摘要

FIELD: physics.SUBSTANCE: invention relates to a device for direct conversion of energy of radiochemical beta-decay of an isotope into a potential difference and is intended for use in autonomous systems as a source of direct current. Device comprises semiconductor structure of planar or vertical design with p-n junction, radioisotopic material with pure beta-decay, longer period and sufficient half-life activity, electric terminals for switching of structural elements into electric circuit, allowing to control characteristics by current and voltage; device also has housing providing environmental safety of use. Semiconductor structure used is a silicon carbide heterostructure on a monocrystalline silicon substrate, wherein the molecular form of silicon carbide includes a carbon-14 radioisotope. Fraction of the radio-carbon isotope C-14 in the structure of silicon carbide with respect to carbon C-12 ranges from 10to 10%. Variant with silicon carbide porous structure is also possible.EFFECT: increased specific energy characteristics of converter to electric energy of radio-chemical decay of carbon-14 using heterostructure of silicon carbide on silicon substrate as direct energy converter.8 cl, 5 dwg
机译:技术领域本发明涉及一种用于将同位素的放射化学β-衰变的能量直接转换成电势差的装置,并且打算在自主系统中用作直流源。该装置包括具有p-n结的平面或垂直设计的半导体结构,具有纯β衰变,更长的周期和足够的半衰期活性的放射性同位素材料,用于将结构元件切换为电路并允许通过电流和电压控制特性的电端子;设备还具有提供使用环境安全性的外壳。所使用的半导体结构是单晶硅衬底上的碳化硅异质结构,其中碳化硅的分子形式包括碳14放射性同位素。碳化硅结构中的放射性碳同位素C-14相对于碳C-12的分数范围为10%至10%。碳化硅多孔结构的变体也是可能的。效果:利用硅衬底上的碳化硅的异质结构作为直接能量转换器,转换器的比能特性增加到碳14的放射化学衰变电能。8cl,5 dwg

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号