A method of forming a metallic interconnect, method of making a semiconductor interconnect having a metallic interconnect, and a semiconductor interconnect semiconductor device array

摘要

A metallic interconnect and a semiconductor device containing the same, wherein a method of making the same may include: providing a first structure including a first metallic layer having protruding first microstructures; Providing a second structure including a second metallic layer having protruding second microstructures; Contacting the first and second microstructures to form a mechanical connection between the structures, wherein the mechanical connection is configured to allow the penetration of a fluid; Removing one or more non-metallic compounds on the first metallic layer and the second metallic layer with a reducing agent which penetrates the mechanical compound and reacts with the one or more non-metallic compounds; and heating the first metallic layer and the second metallic layer to a temperature causing interdiffusion of the first metallic layer and the second metallic layer to form the metallic interconnect between the structures.