Method for producing an atomic trap and atomic trap

摘要

A method for producing an atomic trap (20), comprising the steps of: (a) applying an electrically conductive starting layer (2) to a substrate (1), (b) applying at least one electrical conductor element (4) to the starting layer (2) by means of electrochemical Deposition and / or in the lift-off method, (c) applying at least one contacting element (6) by means of electrochemical deposition and / or in the lift-off method, so that the at least one contacting element (6) is electrically conductive with the at least one electrical conductor element (4) is connected, (d) removing the starting layer (2) in areas where no electrical conductor element (4) has been applied, (e) applying an insulating layer (7) comprising the at least one electrical conductor element (4) and the at least partially covering a contacting element (6), (f) planarizing the insulating layer (7) and exposing the at least one contacting element (6), and (g) applying at least one it further electrical conductor element (14) by means of electrochemical deposition and / or in the lift-off process, so that the at least one further electrical conductor element (14) is electrically conductively connected to the at least one contacting element (6).