INTEGRATION OF DOTIERSTFFATOMES IN THE WATER ASSAY FOR DONATOR- OR ACCEPTOR-BASED SPIN-QUBITS

摘要

Embodiments of the present disclosure describe a method for making spin-qubit device arrays using dopant-based spin qubits, i. Spin qubit devices operating in a semiconductor host layer involving a donor or acceptor dopant atom. The method includes first providing a pair of gate electrodes over a semiconductor host layer and then providing a window structure between the first and second gate electrodes, wherein the window structure is a continuous solid material extending between the first and second electrodes and covering the semiconductor host layer, except for an opening through which a dopant atom is to be implanted into the semiconductor host layer. By using a defined gate first process, the method can address scalability challenges and provide a deterministic way of producing dopant-based spin. Create qubits at desired positions, thereby promoting the integration of wafer-scale dopant-based spin-qubit devices for use in quantum computing devices.