Tunnel magnetoresistive element and tunnel magnetoresistive sensor

摘要

PROBLEM TO BE SOLVED: To provide a tunnel magnetoresistive element and a tunnel magnetoresistive sensor capable of suppressing a decrease in TMR ratio due to parasitic resistance. A fixed layer 17 having a fixed magnetization direction, a free layer 15 whose magnetization direction can be changed, and a tunnel barrier layer 16 arranged between the fixed layer 17 and the free layer 15 are provided. There is. Further, the first electrode layer 14 is arranged on one of the side of the fixed layer 17 opposite to the tunnel barrier layer 16 and the side of the free layer 15 opposite to the tunnel barrier layer 16. .. The second electrode layer 19 is arranged on the side of the fixed layer 17 opposite to the tunnel barrier layer 16 and the side of the free layer 15 opposite to the tunnel barrier layer 16 on the side opposite to the first electrode layer 14. Has been done. The conductive buffer layer 13 is provided so as to be in contact with the surface of the first electrode layer 14 opposite to the fixed layer 17 or the free layer 15. [Selection diagram] Fig. 1