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Measuring instrument, etching system, silicon concentration measurement method, and silicon concentration measurement program

机译:测量仪器,蚀刻系统,硅浓度测量方法和硅浓度测量程序

摘要

The invention provides a measuring instrument, an etching system, a silicon concentration measurement method and a silicon concentration measurement program. According to an embodiment, the measuringinstrument is provided, and includes an input/output unit, a memory, and a processor. Measurement value information indicating the concentrations of phosphoric acid, second acid and water in measurement target liquid is input into the input/output unit. The measurement target liquid contains phosphoric acid, second acid having a smaller dissociation index pK than the first acid dissociation indexpKa1 of the phosphoric acid, and water. The memory holds variation value information including the relationship between the concentration changes of phosphoric acid, the second acid and water when thesilicon is added so as to become a reference silicon concentration in reference liquid, and the reference silicon concentration. The reference liquid contains phosphoric acid, second acid and water.The processor obtains the silicon concentration of the measurement target liquid, as the measurement value information, based on the measurement value information inputted to the input/output unit andvariation value information read from the memory.
机译:本发明提供了一种测量仪器,蚀刻系统,硅浓度测量方法和硅浓度测量程序。根据一个实施例,提供了一种测量仪器,该测量仪器包括输入/​​输出单元,存储器和处理器。将指示测量目标液体中的磷酸,第二酸和水的浓度的测量值信息输入到输入/输出单元中。测量对象液体包含磷酸,具有比磷酸的第一酸解离指数pKa1小的解离指数pK的第二酸和水。存储器保持变化值信息,该变化值信息包括当添加硅以使其成为参考液体中的参考硅浓度时磷酸,第二酸和水的浓度变化之间的关系以及参考硅浓度。参考液包含磷酸,第二酸和水。处理器基于输入到输入/输出单元的测量值信息和从存储器读取的变化值信息,获得测量目标液的硅浓度作为测量值信息。 。

著录项

  • 公开/公告号JP6767442B2

    专利类型

  • 公开/公告日2020-10-14

    原文格式PDF

  • 申请/专利权人 株式会社東芝;

    申请/专利号JP20180157338

  • 申请日2018-08-24

  • 分类号H01L21/306;H01L21/308;G01N21/3577;G01N21/359;

  • 国家 JP

  • 入库时间 2022-08-21 11:35:28

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