Deposition method of depositing dopant species on a workpiece, implantation method of implanting dopant species into a workpiece, and workpiece processing method of treating a workpiece

摘要

In accordance with the present invention, a method of processing a workpiece is disclosed in which a tuning gas containing the desired dopant species is used to initially coat the inner surface of the plasma chamber. Next, a working gas containing no desired dopant species is introduced and activated to form a plasma. Using this plasma, desired dopant species are sputtered from the inner surface. The dopant species is deposited on the workpiece. A subsequent implant process is then performed to implant the dopant into the workpiece. The implantation process can include heat treatment, knocking in the structure, or both.