Method of forming multilayer structure for pixelated display and multilayer structure for pixelated display

摘要

A method of forming a multilayer structure for a pixelated display and a multilayer structure for a pixelated display are provided. The method comprises providing a first wafer having a first layer deposited on a first substrate, the first layer comprising a plurality of pn junction LEDs (light emitting devices). A second portion having a silicon-based CMOS (complementary metal oxide semiconductor) device formed in a second layer deposited on a second substrate. Wherein the CMOS device is for controlling a plurality of LEDs; and combining the first and second wafers via a double bonding transfer process to form a composite wafer. Having forming. [Selection diagram] FIG.