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Chalcogenide glass composition and chalcogenide switch device
Chalcogenide glass composition and chalcogenide switch device
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机译:硫属化物玻璃组合物和硫属化物开关装置
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摘要
Embodiments of the present disclosure describe chalcogenide glass compositions and chalcogenide switch devices (CSD.) The compositions generally may include 3% to 15%, silicon, 8% to 16% germanium in, greater than 45% selenium, and 20% to 35% arsenic, by weight. The amount of silicon and germanium in a composition generally may include more than 10% by weight. CSDs may include various compositions of chalcogenide glass, and a plurality of them may be used in a memory device, such as die with a memory component, and may be used in various electronic components and systems. Other embodiments may be described and/or claimed.
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