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High-side gate drive circuit, semiconductor module, and 3-phase inverter system
High-side gate drive circuit, semiconductor module, and 3-phase inverter system
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机译:高端栅极驱动电路,半导体模块和三相逆变器系统
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摘要
A high-side gate drive circuit includes pulse generating circuits that generate a first pulse synchronized with an input signal, and level shift circuits that shift a level of a reference voltage for the first pulse to a power supply voltage of a high-side switching element. The level shift circuits include MOSFETs to be driven by the first pulse. The high-side gate drive circuit includes a mask signal generating circuit that generates a mask signal that becomes a high level in a period in which source potential of the MOSFETs becomes a high level, and reshot circuits that input, when the first pulse is input into the level shift circuits during a mask period that is a period in which the mask signal is a high level, a second pulse into the level shift circuits after the mask period.
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