Spin orbit torque type magnetization rotation element, spin orbit torque type magnetoresistive effect element, magnetic memory and reservoir element

摘要

The spin orbit torque type magnetization rotating element according to the present embodiment includes a first insulating layer having a first opening and a second opening, a first conductive portion formed in the first opening, and the second opening. The second conductive portion formed in the first insulating layer is positioned in the first direction, and when viewed from the first direction, extends in the second direction across the first conductive portion and the second conductive portion. A spin orbit torque wiring extending; and a first ferromagnetic layer positioned on a side opposite to the first insulating layer of the spin orbit torque wiring, wherein the first conductive portion is a first facing the spin orbit torque wiring. A second surface that faces the first surface and is farther from the spin orbit torque wiring than the first surface, and a side surface that connects the first surface and the second surface, The side surface is a continuous main surface and a third surface that is inclined or curved with respect to the main surface and is discontinuous with respect to the main surface. It has a.