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Broadband power transistor devices and amplifiers with input-side harmonic termination circuits and methods of manufacture
Broadband power transistor devices and amplifiers with input-side harmonic termination circuits and methods of manufacture
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机译:具有输入侧谐波终端电路的宽带功率晶体管器件和放大器及其制造方法
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摘要
Embodiments of RF amplifiers and RF amplifier devices include a transistor, a multiple-section bandpass filter circuit, and a harmonic termination circuit. The bandpass filter circuit includes a first connection node coupled to the amplifier input, a first inductive element coupled between the first connection node and a ground reference node, a first capacitance coupled between the first connection node and a second connection node, a second capacitance coupled between the second connection node and the ground reference node, and a second inductive element coupled between the second connection node and the transistor input. The harmonic termination circuit includes a third inductive element and a third capacitance connected in series between the transistor input and the ground reference node. The harmonic termination circuit resonates at a harmonic frequency of a fundamental frequency of operation of the RF amplifier.
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